Magnetoresistance Amplification Effect in Silicon Transistor Device
Author:
Affiliation:
1. Key Laboratory for Magnetism and Magnetic materials of Ministry of Education; Lanzhou University; Lanzhou 730000 China
2. Department of Physics; Tongji University; Shanghai 200092 China
Funder
National Basic Research Program of China
National Natural Science Foundation of China
PCSIRT
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201600174/fullpdf
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1. Toward Functional Spintronics
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