In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a ‐VO x Asymmetric Crossbars-Reference-Cited by-同舟云学术

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a ‐VO x Asymmetric Crossbars

Published:2019-08-26 Issue:12 Volume:5 Page:1900605
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Nirantar Shruti¹,Mayes Edwin²,Rahman Md. Ataur¹,Ahmed Taimur¹,Taha Mohammad¹,Bhaskaran Madhu¹,Walia Sumeet¹^ORCID,Sriram Sharath¹

Affiliation:

1. Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University Melbourne 3001 Australia

2. RMIT Microscopy and Microanalysis Facility RMIT University Melbourne 3001 Australia

Funder

Australian National Fabrication Facility

Australian Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900605

Reference29 articles.

1. Are Memristors the Future of AI?

2. Memristor-based memory: The sneak paths problem and solutions

3. The O-V (Oxygen-Vanadium) system

4. A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure

5. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

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