Printed, Self‐Aligned Side‐Gate Organic Transistors with a Sub‐5 µm Gate–Channel Distance on Imprinted Plastic Substrates-Reference-Cited by-同舟云学术

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Printed, Self‐Aligned Side‐Gate Organic Transistors with a Sub‐5 µm Gate–Channel Distance on Imprinted Plastic Substrates

Published:2016-11-07 Issue:12 Volume:2 Page:1600293
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hyun Woo Jin¹,Bidoky Fazel Zare¹,Walker S. Brett²,Lewis Jennifer A.²,Francis Lorraine F.¹,Frisbie C. Daniel¹

Affiliation:

1. Department of Chemical Engineering and Materials Science University of Minnesota 421 Washington Avenue SE Minneapolis MN 55455 USA

2. School of Engineering and Applied Sciences Wyss Institute for Biologically Inspired Engineering Harvard University Cambridge MA 02318 USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201600293

Reference34 articles.

1. OE-A Roadmap for Organic and Printed Electronics

2. All jet-printed polymer thin-film transistor active-matrix backplanes

3. Fabrication of Water-Dispersible Polyaniline-Poly(4-styrenesulfonate) Nanoparticles For Inkjet-Printed Chemical-Sensor Applications

4. Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices

5. Flexible Energy-Storage Devices: Design Consideration and Recent Progress

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