Passivating Surface Defects of n ‐SnO 2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells-Reference-Cited by-同舟云学术

Passivating Surface Defects of n ‐SnO 2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Author:

Peng Ruixiang¹²³^ORCID,Yan Tingting³,Chen Junwei¹,Yang Shangfeng²^ORCID,Ge Ziyi³^ORCID,Wang Mingtai¹^ORCID

Affiliation:

1. Institute of Applied TechnologyHefei Institutes of Physical Science Chinese Academy of Sciences Hefei 230031 P. R. China

2. University of Science and Technology of China Hefei 230026 P. R. China

3. Ningbo Institute of Materials Technology and EngineeringChinese Academy of Sciences Ningbo 315201 P. R. China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Natural Science Foundation of Ningbo

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference49 articles.

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