Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide-Reference-Cited by-同舟云学术

Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide

Published:2018-12-07 Issue: Volume: Page:1800504
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim Gowoon¹²,Zhang Yu‐Qiao²,Min Taewon¹,Suh Hoyoung³,Jang Jae Hyuck³,Kong Hyeonjun¹,Lee Joonhyuk¹,Lee Jaekwang¹,Jeon Tae‐Yeol⁴,Lee Inwon⁵,Cho Jinhyung⁶,Ohta Hiromichi²⁷,Jeen Hyoungjeen¹^ORCID

Affiliation:

1. Department of PhysicsPusan National University Busan 46241 Korea

2. Graduate School of Information Science and TechnologyHokkaido University N14W9 Kita Sapporo 060‐0814 Japan

3. Electron Microscopy Research CenterKorea Basic Science Institute Daejeon 34133 Korea

4. Pohang Accelerator Laboratory Pohang 37673 Korea

5. Department of Naval Architecture and Ocean EngineeringPusan National University Busan 46241 Korea

6. Department of Physics EducationPusan National University Busan 46241 Korea

7. Research Institute for Electronic ScienceHokkaido University N20W10 Kita Sapporo 001‐0020 Japan

Funder

Ministry of Education

National Research Foundation of Korea

Japan Society for the Promotion of Science

Ministry of Science ICT and Future Planning

Korea Basic Science Institute

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800504

Reference27 articles.

1. Study of Phase Transition in NbO2

2. Electron Transport in Single Crystals of Niobium Dioxide

3. Electrical Properties of Semiconducting NbO2

4. Lattice dynamics of oxides with rutile structure and instabilities at the metal-semiconductor phase transitions ofNbO2andVO2

5. Extremely Small Energy Gap in the Quasi-One-Dimensional Conducting Chain CompoundSrNbO3.41

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