Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction-Reference-Cited by-同舟云学术

Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction

Published:2017-07-31 Issue:9 Volume:3 Page:1700186
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Luo Zhaochu¹,Piao Hong‐Guang¹,Brooks Andrew V.²,Wang Xiaofeng³,Chen Jiaojiao¹,Xiong Chengyue¹,Yang Fuhua³,Wang Xiangrong⁴,Zhang Xiao‐Guang²,Zhang Xiaozhong¹

Affiliation:

1. Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy School of Materials Science and Engineering Tsinghua University Beijing 100084 China

2. Department of Physics and the Quantum Theory Project University of Florida Gainesville FL 32611 USA

3. Institute of Semiconductors Chinese Academy of Sciences Beijing 100084 China

4. Physics Department The Hong Kong University of Science and Technology Clear Water Bay Hong Kong 999077 China

Funder

National Natural Science Foundation of China

National Science Foundation

Research Grants Council, University Grants Committee

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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