Ta Doping Enhanced Room‐Temperature Ferromagnetism in 2D Semiconducting MoTe 2 Nanosheets-Reference-Cited by-同舟云学术

Ta Doping Enhanced Room‐Temperature Ferromagnetism in 2D Semiconducting MoTe 2 Nanosheets

Published:2019-08-05 Issue:10 Volume:5 Page:1900552
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yang Li¹²,Wu Hao¹²,Zhang Wenfeng¹²^ORCID,Lou Xun¹²,Xie Zijian¹²,Yu Xu¹²,Liu Yuan¹²,Chang Haixin¹²

Affiliation:

1. Center for Joining and Electronic PackagingState Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology Wuhan 430074 P. R. China

2. Shenzhen R&D Center of Huazhong University of Science and Technology Shenzhen 518000 P. R. China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900552

Reference53 articles.

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2. Spintronics: Fundamentals and applications

3. Making Nonmagnetic Semiconductors Ferromagnetic

4. Ferromagnetic semiconductors

5. Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

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