Source-Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications-Reference-Cited by-同舟云学术

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Source-Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications

Published:2016-12-14 Issue:1 Volume:3 Page:1600256
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Opoku Charles¹,Sporea Radu A.¹,Stolojan Vlad¹,Silva S. Ravi P.¹,Shkunov Maxim¹

Affiliation:

1. Advanced Technology Institute; Electrical and Electronic Engineering; University of Surrey; Guildford GU2 7XH UK

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis

2. A universal self-charging system driven by random biomechanical energy for sustainable operation of mobile electronics

3. Ultralow-Power Electronics for Biomedical Applications

4. Functional Electrical Stimulation by Nanogenerator with 58 V Output Voltage

5. Replacing a Battery by a Nanogenerator with 20 V Output

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1. Toward low-power-consumption source-gated phototransistor;Applied Physics Letters;2024-05-13

2. Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts;Applied Physics Letters;2023-09-04

3. Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels;Applied Physics Letters;2023-04-24

4. High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction;Proceedings of the National Academy of Sciences;2023-01-11

5. New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors;Nano Letters;2022-11-29

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