Distinct Substrate Effect on the Reversibility of the Metal-Insulator Transitions in Electrolyte-Gated VO2Thin Films-Reference-Cited by-同舟云学术

Distinct Substrate Effect on the Reversibility of the Metal-Insulator Transitions in Electrolyte-Gated VO2Thin Films

Published:2015-05-21 Issue:7 Volume:1 Page:1500093
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Nakano Masaki¹²,Okuyama Daisuke²,Shibuya Keisuke²³,Mizumaki Masaichiro⁴,Ohsumi Hiroyuki⁵,Yoshida Masaro¹,Takata Masaki⁵,Kawasaki Masashi¹²,Tokura Yoshinori¹²,Arima Takahisa²⁶,Iwasa Yoshihiro¹²

Affiliation:

1. Quantum-Phase Electronics Center and Department of Applied Physics; University of Tokyo; Tokyo 113-8656 Japan

2. RIKEN Center for Emergent Matter Science (CEMS); Wako 351-0198 Japan

3. National Institute of Advanced Industrial Science and Technology (AIST); Tsukuba 305-8562 Japan

4. Japan Synchrotron Radiation Research Institute (JASRI); Hyogo 679-5198 Japan

5. RIKEN SPring-8 Center; Hyogo 679-5148 Japan

6. Department of Advanced Materials Science; University of Tokyo; Kashiwa 277-8561 Japan

Funder

Japan Society for the Promotion of Science

JSPS

Sumitomo Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference34 articles.

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4. Superconducting Dome in a Gate-Tuned Band Insulator

5. Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets

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