Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower-Reference-Cited by-同舟云学术

Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In-Plane Electrical Anisotropy and Gate-Tunable Thermopower

Published:2016-10-10 Issue:11 Volume:2 Page:1600292
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pei Tengfei¹²,Bao Lihong¹²,Ma Ruisong¹²,Song Shiru¹²,Ge Binghui¹,Wu Liangmei¹²,Zhou Zhang¹²,Wang Guocai¹²,Yang Haifang¹,Li Junjie¹,Gu Changzhi¹,Shen Chengmin¹²,Du Shixuan¹²,Gao Hong-Jun¹²

Affiliation:

1. Institute of Physics & University of Chinese Academy of Sciences; Chinese Academy of Sciences; P. O. Box 603 Beijing 100190 China

2. Beijing Key Laboratory for Nanomaterials and Nanodevices; Beijing 100190 China

Funder

National Key Research & Development Projects of China

National “973” Projects of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201600292/fullpdf

Reference28 articles.

1. Van der Waals heterostructures

2. Graphene-Like Two-Dimensional Materials

3. Black phosphorus field-effect transistors

4. Single-Crystal Colloidal Nanosheets of GeS and GeSe

5. Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS2 and Orthorhombic p-Type SnS Crystals

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