Low‐Power Monolithically Stacked Organic Photodiode‐Blocking Diode Imager by Turn‐On Voltage Engineering-Reference-Cited by-同舟云学术

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Low‐Power Monolithically Stacked Organic Photodiode‐Blocking Diode Imager by Turn‐On Voltage Engineering

Published:2018-08-07 Issue:11 Volume:4 Page:1800311
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wu Yi‐Lin¹²,Matsuhisa Naoji¹,Zalar Peter¹,Fukuda Kenjiro²³,Yokota Tomoyuki¹,Someya Takao¹²³^ORCID

Affiliation:

1. Electrical and Electronic Engineering and Information System The University of Tokyo 7‐3‐1 Bunkyo‐ku Tokyo 113‐8656 Japan

2. Center for Emergent Matter Science RIKEN 2‐1 Hirosawa Wako Saitama 351‐0198 Japan

3. Thin‐Film Device Laboratory RIKEN 2‐1 Hirosawa Wako Saitama 351‐0198 Japan

Funder

Japan Science and Technology Agency

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800311

Reference55 articles.

1. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

2. Nanowire active-matrix circuitry for low-voltage macroscale artificial skin

3. Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

4. Skin-like pressure and strain sensors based on transparent elastic films of carbon nanotubes

5. A flexible and highly sensitive strain-gauge sensor using reversible interlocking of nanofibres

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