Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109-Reference-Cited by-同舟云学术

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Published:2017-05-17 Issue:7 Volume:3 Page:1700152
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yoon Kyung Jean¹,Kim Gun Hwan²,Yoo Sijung¹,Bae Woorham³,Yoon Jung Ho¹,Park Tae Hyung¹,Kwon Dae Eun¹,Kwon Yeong Jae¹,Kim Hae Jin¹,Kim Yu Min¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center; Seoul National University; Seoul 08826 Republic of Korea

2. Thin Film Materials Research Center; Korea Research Institute of Chemical Technology; Daejeon 34114 Republic of Korea

3. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center; Seoul National University; Seoul 08826 Republic of Korea

Funder

Global Research Laboratory Program

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Prospective of Semiconductor Memory Devices: from Memory System to Materials

2. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

3. Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

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