Vertically Aligned WS 2 Layers for High‐Performing Memristors and Artificial Synapses-Reference-Cited by-同舟云学术

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Vertically Aligned WS 2 Layers for High‐Performing Memristors and Artificial Synapses

Published:2019-07-23 Issue:10 Volume:5 Page:1900467
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kumar Mohit¹²,Ban Dong‐Kyun¹²,Kim Sang Moon¹³,Kim Joondong¹²^ORCID,Wong Ching‐Ping⁴

Affiliation:

1. Multidisciplinary Core Institute for Future EnergiesIncheon National University 119 Academy Rd., Yeonsu Incheon 22012 Republic of Korea

2. Department of Electrical EngineeringIncheon National University 119 Academy Rd., Yeonsu Incheon 22012 Republic of Korea

3. Department of Mechanical EngineeringIncheon National University 119 Academy Rd., Yeonsu Incheon 22012 Republic of Korea

4. School of Materials Science and EngineeringGeorgia Institute of Technology Atlanta GA 30332 USA

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900467

Reference36 articles.

1. Brain-Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity

2. All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

3. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

4. Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

5. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

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