MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices-Reference-Cited by-同舟云学术

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

Published:2019-11-12 Issue:1 Volume:6 Page:1900493
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Mao Huiwu¹,Gu Chen²^ORCID,Yan Shiqi³,Xin Qian³,Cheng Shuai¹,Tan Peng²,Wang Xiangjing¹,Xiu Fei¹,Liu Xiaoqin²,Liu Juqing¹^ORCID,Huang Wei¹,Sun Linbing²

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 P. R. China

2. State Key Laboratory of Materials‐Oriented Chemical Engineering Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) College of Chemical Engineering Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 P. R. China

3. Center of Nanoelectronics, and School of Microelectronics Shandong University Jinan 250100 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900493

Reference34 articles.

1. Ferroelectric switching of a two-dimensional metal

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges