Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film-Reference-Cited by-同舟云学术

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Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film

Published:2018-09-05 Issue:12 Volume:4 Page:1800204
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Poggini Lorenzo¹²^ORCID,Gonidec Mathieu¹²^ORCID,González‐Estefan Juan H.¹²,Pecastaings Gilles³,Gobaut Benoît⁴^ORCID,Rosa Patrick¹²^ORCID

Affiliation:

1. CNRSICMCB UMR 5026 F‐33600 Pessac France

2. Univ. Bordeaux, ICMCB UMR 5026 F‐33600 Pessac France

3. Université de Bordeaux‐INP, LCPO‐CNRS UMR 5629 F‐33607 Pessac, Cedex France

4. Synchrotron SOLEILL'orme des Merisiers Saint‐Aubin‐BP48 F‐91192 Gif‐sur‐Yvette Cedex France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800204

Reference69 articles.

1. Spin-Transition Polymers: From Molecular Materials Toward Memory Devices

2. Spin-crossover metal–organic frameworks: promising materials for designing gas sensors

3. Pressure and Temperature Spin Crossover Sensors with Optical Detection

4. Charge transport properties of spin crossover systems

5. Current Switching Coupled to Molecular Spin-States in Large-Area Junctions

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