Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse-Reference-Cited by-同舟云学术

Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse

Published:2018-07-16 Issue:9 Volume:4 Page:1800223
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

La Barbera Selina¹^ORCID,Ly Denys R. B.¹,Navarro Gabriele¹,Castellani Niccolò¹,Cueto Olga¹,Bourgeois Guillaume¹,De Salvo Barbara¹,Nowak Etienne¹,Querlioz Damien²,Vianello Elisa¹

Affiliation:

1. Univ. Grenoble Alpes; CEA, LETI 38000 Grenoble France

2. Centre de Nanosciences et de Nanotechnologies; CNRS; Univ. Paris-Sud; Université Paris-Saclay; C2N - Orsay 91405 Orsay cedex France

Funder

H2020 European Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800223/fullpdf

Reference36 articles.

1. Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

2. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

3. Projected phase-change memory devices

4. Learning through ferroelectric domain dynamics in solid-state synapses

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