Tip‐Induced Nano‐Engineering of Strain, Bandgap, and Exciton Funneling in 2D Semiconductors-Reference-Cited by-同舟云学术

Tip‐Induced Nano‐Engineering of Strain, Bandgap, and Exciton Funneling in 2D Semiconductors

Published:2021-03-11 Issue:17 Volume:33 Page:2008234
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Koo Yeonjeong¹,Kim Yongchul²,Choi Soo Ho³,Lee Hyeongwoo¹,Choi Jinseong¹,Lee Dong Yun¹,Kang Mingu¹,Lee Hyun Seok⁴,Kim Ki Kang³⁵,Lee Geunsik²⁶,Park Kyoung‐Duck¹^ORCID

Affiliation:

1. Department of Physics Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

2. Department of Chemistry Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

3. Center for Integrated Nanostructure Physics (CINAP) Institute for Basic Science (IBS) Sungkyunkwan University Suwon 16419 Republic of Korea

4. Department of Physics Research Institute for Nanoscale Science and Technology Chungbuk National University Cheongju 28644 Republic of Korea

5. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

6. Center for Wave Energy Materials Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202008234

Reference55 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Coulomb interaction in monolayer transition-metal dichalcogenides

4. Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

5. Valley-Selective Optical Stark Effect in Monolayer WS2

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