Two‐Dimensional Ferroic Materials for Non‐volatile Memory Applications

Author:

Wang Hao1,Wen Yao1,Zeng Hui1,Xiong Ziren1,Tu Yangyuan1,Zhu Hao1,Cheng Ruiqing1,Yin Lei1,Jiang Jian1,Zhai Baoxing1,Liu Chuansheng1,Shan Chongxin2,He Jun1345

Affiliation:

1. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education and School of Physics and Technology Wuhan University Wuhan 430072 China

2. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material Physics Ministry of Education School of Physics Zhengzhou University Zhengzhou 450052 China

3. Hubei Luojia Laboratory Wuhan 430079 China

4. Wuhan Institute of Quantum Technology Wuhan 430206 China

5. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100190 China

Abstract

AbstractThe emerging non‐volatile memory technologies based on ferroic materials are promising for producing high‐speed, low‐power, and high‐density memory in the integrated circuits field. Long‐range ferroic orders observed in two‐dimensional (2D) materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced non‐volatile memory. In this context, this paper conducts a systematic review of emergent 2D ferroic materials, emphasizing their recent research on non‐volatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials and their relevant devices.This article is protected by copyright. All rights reserved

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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