Formation of Highly Doped Nanostripes in 2D Transition Metal Dichalcogenides via a Dislocation Climb Mechanism

Author:

Lin Yung‐Chang1ORCID,Karthikeyan Jeyakumar23ORCID,Chang Yao‐Pang4ORCID,Li Shisheng5ORCID,Kretschmer Silvan6ORCID,Komsa Hannu‐Pekka27ORCID,Chiu Po‐Wen4ORCID,Krasheninnikov Arkady V.26ORCID,Suenaga Kazu1ORCID

Affiliation:

1. Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan

2. Department of Applied Physics Aalto University P. O. Box 11100 Aalto 00076 Finland

3. Department of Basic Sciences and Humanities Rajiv Gandhi Institute of Petroleum Technology Jais Amethi Uttar Pradesh 229304 India

4. Department of Electrical Engineering National Tsing Hua University Hsinchu 30013 Taiwan

5. International Center for Young Scientists (ICYS) National Institute for Materials Science (NIMS) Tsukuba 305‐0044 Japan

6. Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf 01328 Dresden Germany

7. Microelectronics Research Unit University of Oulu P. O. Box 8000 Oulu 90014 Finland

Funder

Japan Society for the Promotion of Science

Academy of Finland

Deutsche Forschungsgemeinschaft

Technische Universität Dresden

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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