Efficient Inorganic Vapor‐Assisted Defects Passivation for Perovskite Solar Module

Abstract

AbstractSurface trap as intrinsic defects‐mediated non‐radiative charge recombination is a major obstacle to achieving the reliable fabrication of high‐efficiency and large‐area perovskite photovoltaics. Here a CS2 vapor‐assisted passivation strategy is proposed for perovskite solar module, aiming to passivate the iodine vacancy and uncoordinated Pb2+ caused by ion migration. Significantly, this method can avoid the disadvantages of inhomogeneity film caused by spin‐coating‐assisted passivation and reconstruction of perovskite surface from solvent. The CS2 vapor passivated perovskite device presents a higher defect formation energy (0.54 eV) of iodine vacancy than the pristine (0.37 eV), while uncoordinated Pb2+ is bonded with CS2. The shallow level defect passivation of iodine vacancy and uncoordinated Pb2+ has obviously enhanced the device efficiencies (25.20% for 0.08 cm2 and 20.66% for 40.6 cm2) and the stability, exhibiting an average T80‐lifetime of 1040 h working at the maximum power point, and maintaining over 90% of initial efficiency after 2000 h at RH = 30% and 30 °C.