Multifunctional Magnetic Oxide‐MoS2 Heterostructures on Silicon

Author:

Yang Allen Jian1,Wu Liang2,Liu Yanran1,Zhang Xinyu2,Han Kun3,Huang Ying4,Li Shengyao1,Loh Xian Jun5,Zhu Qiang56,Su Rui178,Nan Ce‐Wen9ORCID,Renshaw Wang Xiao17ORCID

Affiliation:

1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

2. Faculty of Material Science and Engineering Kunming University of Science and Technology Kunming Yunnan 650093 China

3. Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei 230601 China

4. State Key Laboratory of Environment‐friendly Energy Materials Southwest University of Science and Technology Mianyang 621010 China

5. Institute of Materials Research and Engineering (IMRE) A*STAR 2 Fusionopolis Way, Innovis Singapore 138634 Singapore

6. School of Chemistry, Chemical Engineering and Biotechnology Nanyang Technological University 21 Nanyang Link Singapore 637371 Singapore

7. School of Electrical and Electronic Engineering Nanyang Technological University Singapore 637371 Singapore

8. MajuLab International Joint Research Unit UMI 3654 CNRS Université Côte d'Azur Sorbonne Université National University of Singapore Nanyang Technological University Singapore 637371 Singapore

9. State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China

Abstract

AbstractCorrelated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si‐based platforms, is challenging. Here, van der Waals heterostructures of La0.7Sr0.3MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force‐mediated transfer are used to fabricate the LSMO‐MoS2 heterostructures. The LSMO‐MoS2 heterostructures exhibit a gate‐tunable rectifying behavior, based on which metal‐semiconductor field‐effect transistors (MESFETs) with on‐off ratios of over 104 can be achieved. The LSMO‐MoS2 heterostructures can function as photodiodes displaying considerable open‐circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO‐MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO‐MoS2 heterostructure devices on Si‐based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.

Funder

Agency for Science, Technology and Research

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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