Ultralow‐Power and Radiation‐Tolerant Complementary Metal‐Oxide‐Semiconductor Electronics Utilizing Enhancement‐Mode Carbon Nanotube Transistors on Paper Substrates-Reference-Cited by-同舟云学术

Ultralow‐Power and Radiation‐Tolerant Complementary Metal‐Oxide‐Semiconductor Electronics Utilizing Enhancement‐Mode Carbon Nanotube Transistors on Paper Substrates

Published:2022-09-02 Issue:40 Volume:34 Page:2204066
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Wang Xin¹²³⁴,Zhu Maguang²^ORCID,Li Xiaoqian¹,Qin Zongze⁴,Lu Guanghao³⁴,Zhao Jianwen¹³^ORCID,Zhang Zhiyong²^ORCID

Affiliation:

1. Division of Nanodevices and Related Nanomaterials Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences No. 398 Ruoshui Road, SEID, Suzhou Industrial Park Suzhou Jiangsu Province 215123 P.R. China

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐based Electronics, School of Electronics Peking University Beijing 100871 P.R. China

3. School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China No. 398 Ruoshui Road, SEID, Suzhou Industrial Park Suzhou Jiangsu Province 215123 P.R. China

4. Frontier Institute of Science and Technology State Key Laboratory of Electrical Insulation and Power Equipment Xi'an Jiaotong University Xi'an 710054 P.R. China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Technologies Research and Development Program

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202204066

Reference52 articles.