High‐Detectivity All‐Polymer Photodiode Empowers Smart Vitality Surveillance and Computational Imaging Rivaling Silicon Diodes

Author:

Chandran Hrisheekesh Thachoth1,Ma Ruijie1,Xu Zhihan2,Veetil Jipsa Chelora3,Luo Yongmin4,Dela Peña Top Archie45,Gunasekaran Iyappan3,Mahadevan Sudhi6,Liu Kuan1,Xiao Yin2,Xia Hao1,Wu Jiaying4,Li Mingjie5,Tsang Sai‐Wing6,Yu Xinge3,Chen Wen2,Li Gang1ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering Research Institute for Smart Energy (RISE) Photonics Research Institute (PRI) The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR P. R. China

2. Department of Electrical and Electronic Engineering The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR P. R. China

3. Hong Kong Center for Cerebro‐Cardiovascular Health Engineering (COCHE) Hong Kong SAR P. R. China

4. Function Hub Advanced Materials Thrust The Hong Kong University of Science and Technology Nansha Guangzhou 511400 P. R. China

5. Faculty of Science Department of Applied Physics The Hong Kong Polytechnic University Kowloon Hong Kong P. R. China

6. Department of Materials Science and Engineering Center of Super‐Diamond and Advanced Films (COSDAF) Hong Kong Institute of Clean Energy (HKICE) City University of Hong Kong Hong Kong SAR P. R. China

Abstract

AbstractNear‐infrared (NIR) organic photodetectors (OPDs), particularly all‐polymer‐based ones, hold substantial commercial promise in the healthcare and imaging sectors. However, the process of optimizing their active layer composition to achieve highly competitive figures of merit lacks a clear direction and methodology. In this work, celebrity polymer acceptor PY‐IT into a more NIR absorbing host system PBDB‐T:PZF‐V, to significantly enhance the photodetection competence, is introduced. The refined all‐polymer ternary broadband photodetector demonstrates superior performance metrics, including experimentally measured noise current as low as 6 fA Hz−1/2, specific detectivity reaching 8 × 1012 Jones, linear dynamic range (LDR) of 145 dB, and swift response speed surpassing 200 kHz, striking a fair balance between sensitivity and response speed. Comprehensive morphological and photophysical characterizations elucidate the mechanisms behind the observed performance enhancements in this study, which include reduced trap density, enhanced charge transport, diminished charge recombination, and balanced electron/hole mobilities. Moreover, the practical deployment potential of the proof‐of‐concept device in self‐powered mode is demonstrated through their application in a machine learning‐based cuffless blood pressure (BP) estimation system and in high‐resolution computational imaging across complex environments, where they are found to quantitatively rival commercial silicon diodes.

Funder

Hong Kong Polytechnic University

Publisher

Wiley

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