Power‐Efficient Multisensory Reservoir Computing Based on Zr‐Doped HfO2 Memcapacitive Synapse Arrays

Author:

Pei Mengjiao1,Zhu Ying1,Liu Siyao1,Cui Hangyuan1,Li Yating1,Yan Yang1,Li Yun1,Wan Changjin1ORCID,Wan Qing12ORCID

Affiliation:

1. National Laboratory of Solid‐State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China

2. Yongjiang Laboratory (Y‐LAB) Ningbo Zhejiang 315202 P. R. China

Abstract

AbstractHardware implementation tailored to requirements in reservoir computing would facilitate lightweight and powerful temporal processing. Capacitive reservoirs would boost power efficiency due to their ultralow static power consumption but have not been experimentally exploited yet. Here, this work reports an oxide‐based memcapacitive synapse (OMC) based on Zr‐doped HfO2 (HZO) for a power‐efficient and multisensory processing reservoir computing system. The nonlinearity and state richness required for reservoir computing could originate from the capacitively coupled polarization switching and charge trapping of hafnium‐oxide‐based devices. The power consumption (≈113.4 fJ per spike) and temporal processing versatility outperform most resistive reservoirs. This system is verified by common benchmark tasks, and it exhibits high accuracy (>94%) in recognizing multisensory information, including acoustic, electrophysiological, and mechanic modalities. As a proof‐of‐concept, a touchless user interface for virtual shopping based on the OMC‐based reservoir computing system is demonstrated, benefiting from its interference‐robust acoustic and electrophysiological perception. These results shed light on the development of highly power‐efficient human–machine interfaces and machine‐learning platforms.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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