Unveiling Charge‐Transport Mechanisms in Electronic Devices Based on Defect‐Engineered MoS <sub>2</sub> Covalent Networks-Reference-Cited by-同舟云学术

Unveiling Charge‐Transport Mechanisms in Electronic Devices Based on Defect‐Engineered MoS ₂ Covalent Networks

Published:2023-03-03 Issue: Volume: Page:2211157
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Ippolito Stefano¹,Urban Francesca¹,Zheng Wenhao²,Mazzarisi Onofrio³,Valentini Cataldo¹,Kelly Adam G.⁴,Gali Sai Manoj⁵,Bonn Mischa²,Beljonne David⁵,Corberi Federico⁶,Coleman Jonathan N.⁴,Wang Hai I.²,Samorì Paolo¹^ORCID

Affiliation:

1. ISIS UMR 7006 Université de Strasbourg CNRS 8 Allée Gaspard Monge Strasbourg 67000 France

2. Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany

3. Max Planck Institute for Mathematics in the Sciences Inselstraße 22 04103 Leipzig Germany

4. School of Physics Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER) Trinity College Dublin Dublin 2 D02 K8N4 Ireland

5. Laboratory for Chemistry of Novel Materials Université de Mons Place du Parc 20 7000 Mons Belgium

6. Department of Physics University of Salerno Via Giovanni Paolo II 132 84084 Fisciano (SA) Italy

Funder

European Commission

Agence Nationale de la Recherche

Alexander von Humboldt-Stiftung

Fonds De La Recherche Scientifique - FNRS

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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