Target Therapy for Buried Interface Enables Stable Perovskite Solar Cells with 25.05% Efficiency

Author:

Ji Xiaofei12,Bi Leyu345,Fu Qiang345ORCID,Li Bolin1,Wang Junwei1,Jeong Sang Young6,Feng Kui1,Ma Suxiang1,Liao Qiaogan1,Lin Francis R.345,Woo Han Young6,Lu Linfeng27,Jen Alex K.‐Y.345ORCID,Guo Xugang1ORCID

Affiliation:

1. Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China

2. The Interdisciplinary Research Center Shanghai Advanced Research Institute Chinese Academy of Sciences 99 Haike Road, Zhangjiang Hi‐Tech Park Pudong Shanghai 201210 China

3. Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong

4. Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong

5. Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong

6. Department of Chemistry Korea University Anamro 145 Seoul 02841 Republic of Korea

7. Jinneng Clean Energy Technology Ltd Lvliang Shanxi 032100 China

Abstract

AbstractThe buried interface in perovskite solar cells (PSCs) is pivotal for achieving high efficiency and stability. However, it is challenging to study and optimize the buried interface due to its non‐exposed feature. Here, a facile and effective strategy is developed to modify the SnO2/perovskite buried interface by passivating the buried defects in perovskite and modulating carrier dynamics via incorporating formamidine oxalate (FOA) in SnO2 nanoparticles. Both formamidinium and oxalate ions show a longitudinal gradient distribution in the SnO2 layer, mainly accumulating at the SnO2/perovskite buried interface, which enables high‐quality upper perovskite films, minimized defects, superior interface contacts, and matched energy levels between perovskite and SnO2. Significantly, FOA can simultaneously reduce the oxygen vacancies and tin interstitial defects on the SnO2 surface and the FA+/Pb2+ associated defects at the perovskite buried interface. Consequently, the FOA treatment significantly improves the efficiency of the PSCs from 22.40% to 25.05% and their storage‐ and photo‐stability. This method provides an effective target therapy of buried interface in PSCs to achieve very high efficiency and stability.

Funder

National Natural Science Foundation of China

City University of Hong Kong

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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