Pressure‐Dependent Behavior of Defect‐Modulated Band Structure in Boron Arsenide-Reference-Cited by-同舟云学术

Pressure‐Dependent Behavior of Defect‐Modulated Band Structure in Boron Arsenide

Author:

Meng Xianghai¹,Singh Akash²,Juneja Rinkle²,Zhang Yanyao³,Tian Fei⁴,Ren Zhifeng⁴,Singh Abhishek K.³,Shi Li¹⁵,Lin Jung‐Fu³⁵,Wang Yaguo¹⁵^ORCID

Affiliation:

1. Department of Mechanical Engineering The University of Texas at Austin Austin TX 78712 USA

2. Materials Research Centre Indian Institute of Science Bangalore 560012 India

3. Department of Geological Sciences Jackson School of Geosciences The University of Texas at Austin Austin TX 78712 USA

4. Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH) University of Houston Houston TX 77204 USA

5. Texas Materials Institute The University of Texas at Austin Austin TX 78712 USA

Funder

National Science Foundation

Office of Naval Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference60 articles.

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