Ultrahigh‐Speed In‐Memory Electronics Enabled by Proximity‐Oxidation‐Evolved Metal Oxide Redox Transistors
Author:
Affiliation:
1. Department of Energy Systems Research Ajou University Suwon 16499 Republic of Korea
2. Department of Materials Science and Engineering Ajou University Suwon 16499 Republic of Korea
Funder
National Research Foundation of Korea
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202200122
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