Affiliation:
1. Center for Artificial Low Dimensional Electronic Systems Institute for Basic Science (IBS) 37673 Pohang Republic of Korea
2. Department of Physics Pohang University of Science and Technology 37673 Pohang Republic of Korea
3. Leiden Institute of Physics Leiden University 2333 CA Leiden The Netherlands
Abstract
AbstractKinks, point‐like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine‐Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T‐TaS2. Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in‐gap electronic states are unveiled, which are mapped approximately into Su–Schrieffer–Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.
Funder
Institute for Basic Science
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
3 articles.
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