Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure-Reference-Cited by-同舟云学术

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Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

Published:2022-01-31 Issue:10 Volume:34 Page:
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Yang Wenda¹^ORCID,Tian Guo¹,Fan Hua²,Zhao Yue²,Chen Hongying¹,Zhang Luyong¹,Wang Yadong¹,Fan Zhen¹,Hou Zhipeng¹,Chen Deyang¹,Gao Jinwei¹,Zeng Min¹,Lu Xubing¹,Qin Minghui¹,Gao Xingsen¹^ORCID,Liu Jun‐Ming³

Affiliation:

1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 China

2. The Department of Physics Southern University of Science and Technology Shenzhen 518000 China

3. Laboratory of Solid‐State Microstructures Nanjing University Nanjing 210093 China

Funder

National Natural Science Foundation of China

Science and Technology Planning Project of Guangdong Province

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202107711

Reference42 articles.

1. Domain wall nanoelectronics

2. Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

3. Topological Structures in Multiferroics - Domain Walls, Skyrmions and Vortices

4. Real-time studies of ferroelectric domain switching: a review

5. Physics and applications of charged domain walls

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