Affiliation:
1. Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 China
2. Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology Shenzhen Guangdong 518055 China
3. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and Engineering Xiangtan University Xiangtan Hunan 411105 China
Abstract
AbstractSilicon‐based field effect transistors have underpinned the information revolution in the last 60 years, and there is a strong desire for new materials, devices, and architectures that can help sustain the computing power in the age of big data and artificial intelligence. Inspired by the Piezo channels, a mechanically gated transistor abandoning electric gating altogether, achieving an ON/OFF ratio over three orders of magnitude under a mechanical force of hundreds of nN is developed. The two‐terminal device utilizes flexoelectric polarization induced by strain gradient, which modulates the carrier concentration in a Van der Waals structure significantly, and it mimics Piezo channels for artificial tactile perception. This simple device concept can be easily adapted to a wide range of semiconducting materials, helping promote the fusion between mechanics and electronics in a similar way as mechanobiology.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
6 articles.
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