Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure-Reference-Cited by-同舟云学术

Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure

Published:2020-09-11 Issue:43 Volume:32 Page:2003567
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kwon Junyoung¹,Shin June‐Chul²,Ryu Huije²,Lee Jae Yoon³,Seo Dongjea⁴^ORCID,Watanabe Kenji⁵,Taniguchi Takashi⁶,Kim Young Duck⁷,Hone James⁸,Lee Chul‐Ho³,Lee Gwan‐Hyoung²⁹^ORCID

Affiliation:

1. Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea

2. Department of Materials Science and Engineering Seoul National University Seoul 08826 Korea

3. KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Korea

4. Department of Electrical and Computer Engineering University of Minnesota Minneapolis Minnesota 55455 USA

5. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

6. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

7. Department of Physics Kyung Hee University Seoul 02447 Korea

8. Department of Mechanical Engineering Columbia University New York NY 10027 USA

9. Research Institute of Advanced Materials (RIAM) Institute of Engineering Research Institute of Applied Physics Seoul National University Seoul 08826 Korea

Funder

National Research Foundation

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202003567

Reference35 articles.

1. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors