Passivating Dipole Layer Bridged 3D/2D Perovskite Heterojunction for Highly Efficient and Stable p‐i‐n Solar Cells

Author:

Zang Xiaoxiao1,Xiong Shaobing12,Jiang Sheng1,Li Di1,Wu Hongbo3,Ren Hao4,Cao Aiping1,Li Bo1,Ma Zaifei3,Chen Jinde4,Ding Liming5,Tang Jianxin4,Sun Zhenrong6,Chu Junhao2,Bao Qinye12ORCID

Affiliation:

1. School of Physics and Electronic Science East China Normal University Shanghai 200241 China

2. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics Fudan University Shanghai 200433 China

3. Center for Advanced Low‐Dimension Materials Donghua University Shanghai 201620 China

4. Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou 215123 China

5. Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology Beijing 100190 China

6. State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai 200241 China

Abstract

AbstractConstructing 3D/2D perovskite heterojunction is a promising approach to integrate the benefits of high efficiency and superior stability in perovskite solar cells (PSCs). However, in contrast to n‐i‐p architectural PSCs, the p‐i‐n PSCs with 3D/2D heterojunction have serious limitations in achieving high‐performance as they suffer from a large energetic mismatch and electron extraction energy barrier from a 3D perovskite layer to a 2D perovskite layer, and serious nonradiative recombination at the heterojunction. Here a strategy of incorporating a thin passivating dipole layer (PDL) onto 3D perovskite and then depositing 2D perovskite without dissolving the underlying layer to form an efficient 3D/PDL/2D heterojunction is developed. It is revealed that PDL regulates the energy level alignment with the appearance of interfacial dipole and strongly interacts with 3D perovskite through covalent bonds, which eliminate the energetic mismatch, reduce the surface defects, suppress the nonradiative recombination, and thus accelerate the charge extraction at such electron‐selective contact. As a result, it is reported that the 3D/PDL/2D junction p‐i‐n PSCs present a power conversion efficiency of 24.85% with robust stability, which is comparable to the state‐of‐the‐art efficiency of the 3D/2D junction n‐i‐p devices.

Funder

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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