Quenching‐Resistant Multiresonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level-Reference-Cited by-同舟云学术

Quenching‐Resistant Multiresonance TADF Emitter Realizes 40% External Quantum Efficiency in Narrowband Electroluminescence at High Doping Level

Published:2021-11-21 Issue:3 Volume:34 Page:2106954
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Jiang Pengcheng¹²,Miao Jingsheng¹,Cao Xiaosong¹^ORCID,Xia Han¹,Pan Ke¹,Hua Tao¹,Lv Xialei¹,Huang Zhongyan¹,Zou Yang¹,Yang Chuluo¹^ORCID

Affiliation:

1. Shenzhen Key Laboratory of Polymer Science and Technology College of Materials Science and Engineering Shenzhen University Shenzhen 518060 P. R. China

2. College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202106954

Reference53 articles.

1. High-Performance Dibenzoheteraborin-Based Thermally Activated Delayed Fluorescence Emitters: Molecular Architectonics for Concurrently Achieving Narrowband Emission and Efficient Triplet-Singlet Spin Conversion

2. Recent progress of narrowband TADF emitters and their applications in OLEDs

3. Recent advances in organic luminescent materials with narrowband emission

4. Highly efficient organic light-emitting diodes from delayed fluorescence

5. Highly efficient blue thermally activated delayed fluorescence emitters based on symmetrical and rigid oxygen-bridged boron acceptors

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