Spin‐Selective Memtransistors with Magnetized Graphene

Author:

Jeong Juyeong1,Kiem Do Hoon1,Guo Dan2,Duan Ruihuan34,Watanabe Kenji5,Taniguchi Takashi5,Liu Zheng4,Han Myung Joon1,Zheng Shoujun2,Yang Heejun1ORCID

Affiliation:

1. Department of Physics Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 South Korea

2. Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics, Beijing Institute of Technology Beijing 100081 China

3. CINTRA CNRS/NTU/THALES Research Techno Plaza Nanyang Technological University Singapore 637371 Singapore

4. School of Materials Science and Engineering Nanyang Technological University Singapore Singapore

5. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 3030044 Japan

Abstract

AbstractSpin‐polarized bands in pristine and proximity‐induced magnetic materials are promising building blocks for future devices. Conceptually new memory, logic, and neuromorphic devices are conceived based on atomically thin magnetic materials and the manipulation of their spin‐polarized bands via electrical and optical methods. A critical remaining issue is the direct probe and the optimized use of the magnetic coupling effect in van der Waals heterostructures, which requires further delicate design of atomically thin magnetic materials and devices. Here, a spin‐selective memtransistor with magnetized single‐layered graphene on a reactive antiferromagnetic material, CrI3, is reported. The spin‐dependent hybridization between graphene and CrI3 atomic layers enables the spin‐selective bandgap opening in the single‐layered graphene and the electric field control of magnetization in a specific CrI3 layer. The microscopic working principle is clarified by the first‐principles calculations and theoretical analysis of the transport data. Reliable memtransistor operations (i.e., memory and logic device‐combined operations), as well as a spin‐selective probe of Landau levels in the magnetized graphene, are achieved by using the subtle manipulation of the magnetic proximity effect via electrical means.

Funder

National Natural Science Foundation of China

National Research Foundation of Korea

Samsung Science and Technology Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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