Enhancing Transition Dipole Moments of Heterocyclic Semiconductors via Rational Nitrogen‐Substitution for Sensitive Near Infrared Detection-Reference-Cited by-同舟云学术

Enhancing Transition Dipole Moments of Heterocyclic Semiconductors via Rational Nitrogen‐Substitution for Sensitive Near Infrared Detection

Published:2022-06-07 Issue:28 Volume:34 Page:2201600
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Wang Wei¹,Miao Xiaodan¹²,Cai Guilong³,Ding Li⁴,Li Yawen¹²,Li Tengfei¹,Zhu Yufan¹,Tao Liting⁴,Jia Yixiao¹,Liang Yuanxin¹²,Lu Xinhui³,Fang Yanjun⁴,Yi Yuanping¹²,Lin Yuze¹²^ORCID

Affiliation:

1. Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

2. University of Chinese Academy of Sciences Beijing 100049 China

3. Department of Physics The Chinese University of Hong Kong Hong Kong 999077 China

4. State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202201600

Reference64 articles.