Characteristics of ion-beam-synthesized tantalum silicide film-Reference-Cited by-同舟云学术

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Characteristics of ion-beam-synthesized tantalum silicide film

Published:2005 Issue:2 Volume:37 Page:129-132
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Liang J. H.,Ruan W. M.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Formation of a TiSi2/n+poly-Si layer by rapid lamp heating and its application to MOS devices

2. Valence Band Electronic State of Transition-Metal Silicide TiSi2Studied by Soft X-Ray Emission Spectroscopy (SXES)

3. Technology and application of thin silicide films in semiconductor devices and integrated microcircuits

4. Formation of tungsten silicide films by ion beam synthesis

5. Electrical characteristics of TaSi2p+Si and TiSi2p+Si contacts formed by rapid thermal annealing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of ion-beam-synthesized molybdenum silicide film;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

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