A 42.15-68.35 dBΩ tunable gain transimpedance amplifier using 0.18-μm CMOS process

Author:

Chang Yu-Hsin1,Chiang Yen-Chung1,Yang Ching-Yuan1

Affiliation:

1. Department of Electrical Engineering; National Chung Hsing University; 250, Kuo-Kuang Road Taichung 40227 Taiwan Republic of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A single-chip 2.5-Gb/s CMOS burst-mode optical receiver, IEEE Trans Circuits Syst I;Chen;Reg Pap,2009

2. A CMOS tunable transimpedance amplifier;Hwang;IEEE Microwave Wireless Compon Lett,2006

3. A 40mW 3Gb/s self-compensated differential transimpedance amplifier with enlarged input capacitance tolerance in 0.18 μm CMOS technology;Tsai;IEEE J Solid-State Circuits,2009

4. A transimpedance amplifier with a tunable bandwidth in 0.18-μm CMOS;Chien;IEEE Trans Microwave Theory Tech,2010

5. 1.25-Gb/s regulated cascade CMOS trans- impedance amplifier for gigabit Ethernet application;Park;IEEE J Solid-State Circuits,2004

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Advancement of CMOS Transimpedance Amplifier for Optical Receiver;Transactions on Electrical and Electronic Materials;2018-12-19

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