Absorption of Al(GaN)N nanorod arrays with geometrical tuning-Reference-Cited by-同舟云学术

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Absorption of Al(GaN)N nanorod arrays with geometrical tuning

Published:2022-03-18 Issue:5 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Yu Yingzhou¹,Gu Yan¹,Lu Naiyan²,Liu Guanhong¹,Li Sai¹,Niu Huan¹,Yang Chenjia¹,Zhu Chun¹,Wei Chunlei³,Zhang Qi⁴,Zhang Xiumei¹,Yang Guofeng¹

Affiliation:

1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology Jiangnan University Wuxi China

2. The Key Laboratory of Synthetic and Biological Colloids, Ministry of Education Jiangnan University Wuxi China

3. Lumisource Technologies Co., Ltd. Wuxi China

4. Jiangsu Xinguanglian Technology Co., Ltd. Wuxi China

Funder

Fundamental Research Funds for Central Universities of the Central South University

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.3003

Reference24 articles.

1. Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires

2. High Performance Normally-off GaN MOSFETs on Si Substrates

3. Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics

4. Unique optical properties of AlGaN alloys and related ultraviolet emitters

5. Nanowires With Promise for Photovoltaics

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