Run‐to‐run control of PECVD systems: Application to a multiscale three‐dimensional CFD model of silicon thin film deposition-Reference-Cited by-同舟云学术

Run‐to‐run control of PECVD systems: Application to a multiscale three‐dimensional CFD model of silicon thin film deposition

Published:2018-10-04 Issue:7 Volume:65 Page:e16400
ISSN:0001-1541
Container-title:AIChE Journal
language:en
Short-container-title:AIChE J

Author:

Crose Marquis¹,Zhang Weiqi¹,Tran Anh¹,Christofides Panagiotis D.²^ORCID

Affiliation:

1. Dept. of Chemical and Biomolecular EngineeringUniversity of California Los Angeles CA, 90095

2. Dept. of Chemical and Biomolecular Engineering and Department of Electrical and Computer EngineeringUniversity of California Los Angeles CA, 90095

Funder

National Science Foundation

Publisher

Wiley

Subject

General Chemical Engineering,Environmental Engineering,Biotechnology

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aic.16400

Reference16 articles.

1. A CFD model for the PECVD of silicon nitride

2. daSilvaAN MorimotoNI.Gas flow simulation in a PECVD reactor. In: Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology San Juan Puerto Rico 2002:22–25.

3. Multiphysics CFD Modelling for Design and Simulation of a Multiphase Chemical Reactor

4. Uncertainty analysis and robust optimization of multiscale process systems with application to epitaxial thin film growth

5. A robust nonlinear model predictive controller for a multiscale thin film deposition process

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