Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou China
2. TCL China Star Optoelectronics Display Technology Co. Ltd. Shenzhen Guangdong China
3. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd. Shenzhen, Guangdong China
Abstract
In this work, a novel thin film transistor (TFT) structure named
ASD was prepared, which means active layer bottom‐contact with
source/drain(SD) layer. ASD device use the first light shield metal
layer served as SD electrode simultaneously, which can reduce 2‐count‐mask array process compared with traditional top gate (TG)
device. The mobility and subthreshold swing of the ASD a‐IGZO
TFT device can reach 14 cm2/Vs and 0.18 V/dec, respectively. The
PBTS and NBTIS are within 0.5V through process optimization. In
addition, a 7.1 inch Micro‐LED display used ASD TFT backplane
has demonstrated, and Finally, the Micro‐LED panel shows +0.7V
Vth shift after the high temperature and high humidity operation
(HTHHO) 500h reliability test.