Formation of abnormal dual-peak profiles in large tilt angle boron implantation-Reference-Cited by-同舟云学术

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Formation of abnormal dual-peak profiles in large tilt angle boron implantation

Published:2016-10-06 Issue:6 Volume:49 Page:473-478
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Zhu Lei¹,Mai Zhi Hong¹,Lam Jeffrey¹

Affiliation:

1. PTF FA Department; GLOBALFOUNDRIES Singapore Pte Ltd.; 60 Woodlands Industrial Park D, Street 2 Singapore 738406 Singapore

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.6180/fullpdf

Reference12 articles.

1. A hot-carrier analysis of submicrometer MOSFET's

2. Y. Toyoshima IEEE IEDM Tech Dig 1984 786

3. T. Hori IEEE IEDM Tech. Dig 1994 75

4. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

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