SPICE modelling of power Schottky diodes-Reference-Cited by-同舟云学术

SPICE modelling of power Schottky diodes

Published:2008-11 Issue:6 Volume:21 Page:551-561
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Zarębski Janusz,Dąbrowski Jacek

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference15 articles.

1. Kapels H, Rupp R, Lorenz L, Zverev I. SiC Schottky diodes: a milestone hard switching applications. PCIM Nürnberg, Germany 2001.

2. http://www.com/PowerSolutions/product.do?id=MBR40250.

3. Silicon carbide benefits and advantages for power electronics circuits and systems;Elasser;Proceedings of the IEEE,2002

4. Zverev I, Treu M, Kapels H, Hellmund O, Rupp R. SiC Schottky rectifiers: performance, reliability and key applications. EPE 2001 Conference Proceedings, Graz, August 2001.

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