Reliability and degradation of 980 NM InGaAs/GaAs strained quantum well lasers
Author:
Publisher
Wiley
Subject
Management Science and Operations Research,Safety, Risk, Reliability and Quality
Reference17 articles.
1. Band structure engineering of semiconductor lasers for optical communications
2. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
3. Theoretical gain of strained-layer semiconductor lasers in the large strain regime
4. Electronic properties of strained-layer superlattices
5. Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)
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