Transparent Electronics Using One Binary Oxide for All Transistor Layers-Reference-Cited by-同舟云学术

Transparent Electronics Using One Binary Oxide for All Transistor Layers

Published:2018-11-16 Issue:51 Volume:14 Page:1803969
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Alshammari Fwzah H.¹²,Hota Mrinal K.¹,Alshareef Husam N.¹^ORCID

Affiliation:

1. Materials Science and Engineering; Physical Science and Engineering Division; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

2. Department of Physics; University of Hafr Al-Batin (UOHB); Hafr Al-Batin 31991 Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201803969/fullpdf

Reference33 articles.

1. Atomic Layer Deposition of In2O3 Using Cyclopentadienyl Indium: A New Synthetic Route to Transparent Conducting Oxide Films

2. Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes

3. Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

4. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MXenes in Electronics and Communication Devices;Transition Metal Carbides and Nitrides (MXenes) Handbook;2024-06-07

2. Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces;Journal of Materials Science & Technology;2023-11

3. Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics;Advanced Science;2023-01-26

4. Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications;Coatings;2022-02-04

5. High‐Yield Ti 3 C 2 T x MXene–MoS 2 Integrated Circuits;Advanced Materials;2021-12-04