Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2through a Self-Limited Growth Strategy by Interface Engineering-Reference-Cited by-同舟云学术

Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2through a Self-Limited Growth Strategy by Interface Engineering

Published:2015-12-10 Issue:4 Volume:12 Page:438-445
ISSN:1613-6810
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language:en
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Author:

Wan Xi¹,Chen Kun¹,Xie Weiguang²,Wen Jinxiu³,Chen Huanjun³,Xu Jian-Bin¹

Affiliation:

1. Department of Electronic Engineering and Materials Science and Technology Research Center; The Chinese University of Hong Kong; Shatin, N. T. Hong Kong SAR 999077 P. R. China

2. Siyuan Laboratory; Department of Physics; Jinan University; Guangzhou Guangdong 510632 P. R. China

3. School of Physics and Engineering; Sun Yat-Sen University; Guangzhou Guangdong 510275 P. R. China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201502392/fullpdf

Reference46 articles.

1. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

2. Mobility engineering and a metal–insulator transition in monolayer MoS2

3. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

4. Single-layer MoS2 transistors

5. A roadmap for graphene

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