N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability-Reference-Cited by-同舟云学术

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N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability

Published:2014-02-24 Issue:10 Volume:10 Page:1999-2005
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Xu Wentao¹,Lim Tae-Seok¹,Seo Hong-Kyu¹,Min Sung-Yong¹,Cho Himchan¹,Park Min-Ho¹,Kim Young-Hoon¹,Lee Tae-Woo¹

Affiliation:

1. Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH); Pohang Gyungbuk 790-784 Republic of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference66 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Industry-compatible graphene transistors

3. Recent Progress and Challenges in Graphene Nanoribbon Synthesis

4. Extremely efficient flexible organic light-emitting diodes with modified graphene anode

5. Graphenes Converted from Polymers

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