Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction-Reference-Cited by-同舟云学术

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Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction

Published:2016-06-06 Issue:36 Volume:12 Page:5019-5026
ISSN:1613-6810
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language:en
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Author:

Li Guanghui¹,Liu Lin²,Wu Guan¹,Chen Wei¹,Qin Sujie²,Wang Yi³⁴,Zhang Ting¹

Affiliation:

1. i -Lab; Suzhou Institute of Nano-Tech and Nano-Bionics; Chinese Academy of Sciences; Ruoshui Road Suzhou 215123 China

2. Department of Environmental Science; Xi'an Jiaotong-Liverpool University; 111 Ren'ai Road Suzhou 215123 China

3. C&N Intl. Co. Ltd; Beijing 102206 China

4. Institute of Biophysics; Chinese Academy of Sciences; Beijing 100101 China

Funder

Strategic Priority Research Program of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201600835/fullpdf

Reference55 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene-On-Silicon Schottky Junction Solar Cells

3. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

4. Fine Structure Constant Defines Visual Transparency of Graphene

5. Chip-integrated ultrafast graphene photodetector with high responsivity

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