Healing Effect of Controlled Anti-Electromigration on Conventional and High-T c Superconducting Nanowires-Reference-Cited by-同舟云学术

Healing Effect of Controlled Anti-Electromigration on Conventional and High-T c Superconducting Nanowires

Published:2017-05-19 Issue:26 Volume:13 Page:1700384
ISSN:1613-6810
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language:en
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Author:

Baumans Xavier D. A.¹,Lombardo Joseph¹,Brisbois Jérémy¹,Shaw Gorky¹,Zharinov Vyacheslav S.²,He Ge³,Yu Heshan³,Yuan Jie³,Zhu Beiyi³,Jin Kui³,Kramer Roman B. G.⁴⁵,de Vondel Joris Van²,Silhanek Alejandro V.¹

Affiliation:

1. Experimental Physics of Nanostructured Materials; Q-MAT; CESAM; Université de Liège; B-4000 Sart Tilman Belgium

2. INPAC - Institute for Nanoscale Physics and Chemistry; Department of Physics and Astronomy; KU Leuven B-3001 Leuven Belgium

3. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

4. Université Grenoble Alpes; Institut NEEL; F-38000 Grenoble France

5. CNRS; Institut NEEL; F-38000 Grenoble France

Funder

Fonds De La Recherche Scientifique - FNRS

KULeuven Internal Funds

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference43 articles.

1. SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMS

2. DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMS

3. RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS

4. Electromigration failure modes in aluminum metallization for semiconductor devices

5. ELECTROMIGRATION IN SINGLE‐CRYSTAL ALUMINUM FILMS

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