A Dual‐Gate MoS 2 Photodetector Based on Interface Coupling Effect-Reference-Cited by-同舟云学术

A Dual‐Gate MoS 2 Photodetector Based on Interface Coupling Effect

Published:2019-11-26 Issue:1 Volume:16 Page:1904369
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Liao Fuyou¹,Deng Jianan²,Chen Xinyu¹,Wang Yin¹,Zhang Xinzhi¹,Liu Jian²,Zhu Hao¹,Chen Lin¹,Sun Qingqing¹,Hu Weida³,Wang Jianlu³,Zhou Jing³,Zhou Peng¹,Zhang David Wei¹,Wan Jing²,Bao Wenzhong¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Shanghai 200433 China

2. State Key Laboratory of ASIC and SystemSchool of Information Science and TechnologyFudan University Shanghai 200433 China

3. Shanghai Institute of Technical PhysicsChinese Academy of Sciences Shanghai 200083 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201904369

Reference38 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Large-Area Epitaxial Monolayer MoS2

4. Elastic Properties of Freely Suspended MoS2Nanosheets

5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion-irradiation induced structural, electronic, and optical properties modification in a few layered MoS2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

2. Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces;Applied Physics Letters;2024-07-15

3. Comparative study of electronic band gap tuning in 1L-MoSe2 and 1L-WSe2 by heterostructuring (MoSe2/WSe2), alloying (Mo W(1−)Se2) and biaxial straining;Materials Science in Semiconductor Processing;2024-07

4. 2D Growth of BiSCl as Anisotropic Photodetector with Ultrahigh Responsivity and Detectivity;Advanced Optical Materials;2024-06-04

5. Engineering Graphene Phototransistors for High Dynamic Range Applications;ACS Nano;2024-05-10